Optimization of the plasma-assisted chemical vapour deposition of silica-like thin films at low temperatures

Abstract

Results pertaining to the plasma-assisted chemical vapour deposition (PACVD) of SiOᵪCᵧ thin films at room temperature using a self-biasing radio-frequency plasma reactor are presented. Response surface analysis was used for experimental design. A simple technique is illustrated for the optimizing of any physical property, subject to the constraints imposed by the apparatus and by the required values of other physical properties.